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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1409 RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS Features * * * * * 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications. Gold metalization and diffused emitter ballast resistors provide superior long term reliability. TO-39 ABSOLUTE MAXIMUM RATINGS (TCASE = 25C) (TCASE 25 Symbol VCBO VCEO VEBO PDISS IC TJ TSTG Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Total Power Dissipation Collector Peak Current Junction Temperature Storage Temperature Value 65 40 4.0 7.0 1.0 200 -65 to 200 Unit V V V W A C C Thermal Data RTH(J-CASE) Thermal Resistance Junction-case 25 C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1409 25 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC Symbol BVebo BVcbo BVceo Iceo HFE IE = 0.10 mA IC = 0.3 mA IC = 3 mA VCE = 30 V VCE = 5 V Test Conditions IC = 0 mA IE = 0 mA IS = 0 mA IC = 100 mA Min. 4.0 65 40 --20 Value Typ. ----------- Max. ------0.1 200 Unit V V V mA B DYNAMIC Symbol POUT f =175 MHz f =175 MHz f =175 MHz f =1.0MHz Test Conditions PIN = 0.25W PIN = 0.25W PIN = 0.25W VCB= 30V VCC = 28V VCC = 28V VCC = 28V Min. 2.5 50 10 --- Value Typ. --------- Max. ------10 Unit W % dB pf C GP COB Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1409 PACKAGE MECHANICAL DATA Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. |
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